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SGH30N60RUFD
IGBT
SGH30N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Features
* * * * * Short circuit rated 10us @ TC = 100C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 30A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
TO-3P
GCE
E
TC = 25C unless otherwise noted
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC =100C @ TC = 25C @ TC = 100C
SGH30N60RUFD 600 20 48 30 90 25 220 10 235 90 -55 to +150 -55 to +150 300
Units V V A A A A A us W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.53 0.83 40 Units C/W C/W C/W
(c)2002 Fairchild Semiconductor Corporation
SGH30N60RUFD Rev. B1
SGH30N60RUFD
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 30mA, VCE = VGE IC = 30A, VGE = 15V IC = 48A, VGE = 15V 5.0 --6.0 2.2 2.5 8.5 2.8 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1970 310 74 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----30 65 54 138 919 814 1733 34 67 60 281 921 1556 2477 -85 17 39 14 --80 200 --2430 --90 400 --3470 -120 25 55 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ us nC nC nC nH
VCC = 300 V, IC = 30A, RG = 7, VGE = 15V, Inductive Load, TC = 25C
VCC = 300 V, IC = 30A, RG = 7, VGE = 15V, Inductive Load, TC = 125C
@ TC =
VCC = 300 V, VGE = 15V 100C
VCE = 300 V, IC = 30A, VGE = 15V Measured 5mm from PKG
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 25A TC = 100C TC = 25C TC = 100C IF= 25A, di/dt = 200 A/us TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.4 1.3 50 105 4.5 8.5 112 420
Max. 1.7 -95 -10 -375 --
Units V ns A nC
(c)2002 Fairchild Semiconductor Corporation
SGH30N60RUFD Rev. B1
SGH30N60RUFD
90 80 70 Common Emitter TC = 25 20V 15V
90 80 Common Emitter VGE = 15V T C = 25 T C = 125 ------
Collector Current, IC [A]
70 60 50 40 30 20 10 0
Collector Current, IC [A]
60 12V 50 40 30 20 10 0 0 2 4 6 8 VGE = 10V
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
40 Common Emitter V GE = 15V 60A 35 30 45A
Collector - Emitter Voltage, V CE [V]
VCC = 300V Load Current : peak of square wave
4
Load Current [A]
3 30A 2 IC = 15A
25 20 15 10
1 5 0 -50 0 50 100 150 0 Duty cycle : 50% TC = 100 Power Dissipation = 45W 0.1 1 10 100 1000
Case Temperature, T C []
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25
20 Common Emitter T C = 125
Collector - Emitter Voltage, VCE [V]
16
Collector - Emitter Voltage, VCE [V]
16
12
12
8
8 60A 4 IC = 15A 0 30A
4 IC = 15A 0 4 8
30A
60A
12
16
20
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
SGH30N60RUFD Rev. B1
SGH30N60RUFD
3500 3000 2500 2000 1500 1000 Cres 500 0 1 Coes Cies
1000 Common Emitter VGE = 0V, f = 1MHz TC = 25 Common Emitter VCC = 300V, VGE = 15V IC = 30A T C = 25 T C = 125 ------
Ton
Capacitance [pF]
Switching Time [ns]
Tr 100
10 10 1 10 100
Collector - Emitter Voltage, V CE [V]
Gate Resistance, RG [ ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
1000
Switching Time [ns]
Common Emitter V CC = 300V, V GE = 15V IC = 30A T C = 25 T C = 125 -----Toff Toff Tf
10000 Common Emitter V CC = 300V, VGE = 15V IC = 30A T C = 25 T C = 125 ------
Switching Loss [uJ]
Eon Eoff
1000 Eoff
Tf 100 100 1 10 100 1 10 100
Gate Resistance, R G [ ]
Gate Resistance, R G [ ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000 Common Emitter V GE = 15V, RG = 7 T C = 25 T C = 125 ------
1000 Common Emitter V GE = 15V, RG = 7 T C = 25 T C = 125 -----Ton
Switching Time [ns]
Switching Time [ns]
Toff
100
Tr
Tf
Toff 100 Tf
10 15 30 45 60 15 30 45 60
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
SGH30N60RUFD Rev. B1
SGH30N60RUFD
10000 Common Emitter VGE = 15V, RG = 7 TC = 25 TC = 125 ------
15 Common Emitter RL = 10 TC = 25 V CC = 100 V 300 V 200 V 9
Switching Loss [uJ]
Eoff Eon 1000 Eoff
Gate - Emitter Voltage, V [ V ] GE
60
12
6
3
100 15 30 45
0 0 20 40 60 80 100
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
200 100 IC MAX. (Pulsed) 50us IC MAX. (Continuous) 100us 1 10 DC Operation 100
Collector Current, IC [A]
Collector Current, IC [A]
10
1
Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000
0.1
Safe Operating Area VGE = 20V, T C = 100 1 1 10 100 1000
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Thermal Response, Zthjc [/W]
1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01
Pdm t1 t2
single pulse 1E-3 10
-5
Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2002 Fairchild Semiconductor Corporation SGH30N60RUFD Rev. B1
SGH30N60RUFD
100 100 T C = 25 T C = 100 -----VR = 200V IF = 25A T C = 25 T C = 100 ------
Reverse Recovery Current, Irr [A]
0 1 2 3
Forward Current, IF [A]
10
10
1
1 100
1000
Forward Voltage Drop, VFM [V]
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
1000
120 V R = 200V IF = 25A T C = 25 T C = 100 -----V R = 200V IF = 25A T C = 25 T C = 100 ------
Stored Recovery Charge, Qrr [nC]
Reverce Recovery Time, t rr [ns]
1000
800
100
600
80
400
60
200
40
0 100
20 100
1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
(c)2002 Fairchild Semiconductor Corporation
SGH30N60RUFD Rev. B1
SGH30N60RUFD
Package Dimension
TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation SGH30N60RUFD Rev. B1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1

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